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UM5K1N
Transistors
Small switching (30V, 0.1A)
UM5K1N
!Features 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (2.5V) makes this device ideal for portable equipment. 5) Easily designed drive circuits. !Applications Interfacing, switching (30V, 100mA)
ROHM : UMT5 E I A J : SC-88A
!External dimensions (Units : mm)
(4)
(3)
0.65 0.65
1.3 0.9
0.2
(6)
1.25 2.1
0.15 0.7
0.1Min.
0to0.1
Each lead has same dimensions
Abbreviated symbol : K1
!Structure Silicon N-channel MOSFET
!Equivalent circuit
(6) (4)
(1) Tr1 Gate (2) Source (3) Tr2 Gate (4) Tr2 Drain (6) Tr1 Drain
A protection diode has been built in between
Tr1 Tr2 Gate Protection Diode (1) (2)
Gate Protection Diode (3)
the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltagesare exceeded.
!Packaging specifications
Package Type Code Basic ordering unit (pieces) UM5K1N Taping TR 3000
(1)
2.0
(2)
UM5K1N
Transistors
!Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Reverse drain current Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP1 IDR IDRP1 PD2 Tch Tstg Limits 30 20 100 200 100 200 150 150 -55+150 Unit V V mA mA mA mA mW C C
Total power dissipation (Tc=25C) Channel temperature Storage temperature
1 Pw10s, Duty cycle50% 2 With each pin mounted on the recommended lands.
!Electrical characteristics (Ta=25C)
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-stage resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) RDS(on) Yfs Ciss Coss Crss td(on) tr td(off) tr Min. - 30 - 0.8 - - 20 - - - - - - - Typ. - - - - 5 7 - 13 9 4 15 35 80 80 Max. 1 - 1.0 1.5 8 13 - - - - - - - - Unit A V A V mS pF pF pF ns ns ns ns Test Conditions VGS=20V, VDS=0V ID=10A, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100A ID=10mA, VGS=4V ID=1mA, VGS=2.5V ID=10mA, VDS=3V VDS=5V VGS=0V f=1MHz ID=10mA, VDD 5V VGS=5V RL=500 RGS=10
!Electrical characteristic curves
GATE THRESHOLD VOLTAGE : VGS (th) (V)
0.15 4V
DRAIN CURRENT : ID (A)
200m
3V
DRAIN CURRENT : ID (A)
3.5V
Ta=25C Pulsed
100m 50m 20m 10m 5m 2m 1m
0.5m
VDS=3V Pulsed
2
VDS=3V ID=0.1mA Pulsed
1.5
0.1
2.5V
1
0.05
2V VGS=1.5V
Ta=125C 75C 25C -25C
0.5
0.2m
4 5
0 0
1
2
3
0.1m 0
1
2
3
4
0 -50 -25
0
25
50
75
100
125 150
DRAIN-SOURCE VOLTAGE : VDS (V)
GATE-SOURCE VOLTAGE : VGS (V)
CHANNEL TEMPERATURE : Tch (C)
Fig.1 Typical output characteristics
Fig.2 Typical transfer characteristics
Fig.3 Gate threshold voltage vs. channel temperature
UM5K1N
Transistors
50
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) ()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) ()
VGS=4V Pulsed
50
20 10 5
Ta=125C 75C 25C -25C
20 10 5
Ta=125C 75C 25C -25C
VGS=2.5V Pulsed
15
Ta=25C Pulsed
10
2 1 0.5 0.001 0.002
2 1 0.5 0.001 0.002
5
ID=0.1A ID=0.05A
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0 0
5
10
15
20
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Static drain-source on-state resistance vs. drain current ( I )
Fig.5 Static drain-source on-state resistance vs. drain current ( II )
Fig.6 Static drain-source on-state resistance vs. gate-source voltage
9
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) ()
REVERSE DRAIN CURRENT : IDR (A)
8 7 6 5 4 3 2 1 0 -50 -25 0 25 50 75
ID=100mA
VGS=4V Pulsed
FORWARD TRANSFER ADMITTANCE : Yfs (S)
0.5
VDS=3V Pulsed
200m 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m
0.2 0.1 0.05 0.02 0.01 0.005 0.002 Ta=-25C 25C 75C 125C
VGS=0V Pulsed
ID=50mA
Ta=125C 75C 25C -25C
100 125
150
0.001 0.0001 0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05 0.1 0.2
0.5
0
0.5
1
1.5
CHANNEL TEMPERATURE : Tch (C)
DRAIN CURRENT : ID (A)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.7 Static drain-source on-state resistance vs. channel temperature
Fig.8 Forward transfer admittance vs. drain current
Fig.9 Reverse drain current vs. source-drain voltage ( I )
REVERSE DRAIN CURRENT : IDR (A)
200m 100m 50m
Ta=25C Pulsed
50
SWITCHING TIME : t (ns)
20
CAPACITANCE : C (pF)
Ta=25C f=1MHZ VGS=0V Ciss
1000 tf 500 td (off)
200 100 50 20 10 5 2 0.1 0.2
tr td (on)
Ta=25C VDD=5V VGS=5V RG=10 Pulsed
20m 10m 5m 2m 1m 0.5m 0.2m 0.1m VGS=4V
10 5
0V
Coss Crss
2 1 0.5 0.1
0
0.5
1
1.5
0.2
0.5
1
2
5
10
20
50
0.5
1
2
5
10
20
50
100
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (mA)
Fig.10 Reverse drain current vs. source-drain voltage ( II )
Fig.11 Typical capacitance vs. drain-source voltage
Fig.12 Switching characteristics (See Figures 13 and 14 for the measurment circuit and resultant waveforms)
UM5K1N
Transistors
!Switching characteristics measurement circuit
Pulse width 50% 10% 10% 90% 50%
VGS
ID D.U.T. RL
VDS
VGS VDS
RG
10% 90% 90%
td (off) tf toff
VDD
td (on) ton tr
Fig.13 Switching time measurement circuit
Fig.14 Switching time waveforms
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0

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